Sintering effect on electrical properties of ZnO-V2O5-MnO2-Nb2O5 ceramics |
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Authors: | Choon-W Nahm |
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Affiliation: | Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan 614-714, Republic of Korea |
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Abstract: | The microstructure and electrical properties of quaternary ZnO-V2O5-MnO2-Nb2O5 ceramics were investigated at different sintering temperature (875-950 °C). The average grain size increased from 4.4 μm to 9.6 μm with increasing sintering temperature. The breakdown field decreased from 6991 V/cm to 943 V/cm with increasing sintering temperature. Proper sintering for quaternary ZnO-V2O5-MnO2-Nb2O5 ceramics led to surprisingly high nonlinear coefficient (50). The donor concentration increased from 3.33 × 1017 cm−3 to 7.64 × 1017 cm−3 with increasing sintering temperature and the barrier height exhibited the maximum value (1.07 eV) at 900 °C. |
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Keywords: | Ceramics Sintering Electrical properties Varistors |
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