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Effect of Bi doping on the quenching concentration of H11/2/S3/2 level of Er |
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| Authors: | Mingzhu Yang,Yu Sui,Shuchen Lü Mingji Wang,Xianjie WangMuhong Wu,Yang WangTianquan Lü ,Wanfa Liu |
| Affiliation: | a College of Electronic Science, Northeast Petroleum University, Daqing 163000, People''s Republic of China b Center for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People''s Republic of China c International Center for Materials Physics, Academia Sinica, Shenyang 110015, People''s Republic of China d Department of Physics, Harbin Normal University, Harbin 150001, People''s Republic of China e Dalian Institute of Chemical Physics, Dalian 116023, People''s Republic of China |
| Abstract: | Bi3+ and Er3+ codoped Y2O3 was prepared by sol-gel method. The upconversion emission was investigated under 980 nm excitation. For samples without Bi3+, the quenching concentration of 2H11/2/4S3/2 level of Er3+ is 3.0 mol%. However, by 1.5 mol% Bi3+ doping the quenching concentration increases to 5.0 mol%; meanwhile, the green emission is enhanced 1.9 times. The results indicate that both the quenching concentration and the emission intensity of 2H11/2/4S3/2 level can be increased by Bi3+ doping. |
| Keywords: | Luminescence Optical materials Optical properties Sol-gel process |
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