| 膜/块体结构氧化物复合磁电材料研究进展 |
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| 引用本文： | 王婧,吴霞,邓朝勇,朱孔军,南策文.膜/块体结构氧化物复合磁电材料研究进展[J].无机材料学报,2014,29(9):905-911. |
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| 作者姓名： | 王婧 吴霞 邓朝勇 朱孔军 南策文 |
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| 作者单位： | (1. 南京航空航天大学 航空宇航学院, 机械结构力学及控制国家重点实验室, 南京210016; 2. 贵州大学 电子信息学院, 贵阳550025; 3. 清华大学 材料学院, 新型陶瓷与精细工艺国家重点实验室, 北京100084) |
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| 基金项目： | 国家自然科学基金(51221291,51202118,51172108);博士学科点专项科研基金(20120002120012);江苏高校优势学科建设工程资助项目~~ |
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| 摘 要： | 由铁氧体(如: CoFe2O4, NiFe2O4)和铁电相(如: BaTiO3, Pb(ZrxTi1-x)O3)组成的复合材料是经典的复合磁电材料, 也是最早在室温下观察到大磁电耦合效应的复合材料。这类复合材料的制备通常是在高于1200℃的高温条件下将铁氧体相和铁电相两相共烧而成。然而, 在高温过程中不可避免的存在原子互扩散及两相界面反应, 甚至出现微裂纹。本文综合介绍了几种通过直接在一种铁性氧化物块体上生长另一种铁性陶瓷膜的方法, 从而实现铁电、铁磁两相之间的低温复合(一般不高于800℃), 避免了高温共烧过程中的固有问题, 并展示了此类膜/块体复合体系的磁电耦合性能常用的表征方法。
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| 关 键 词： | 膜/块体复合 磁电效应 低温制备 综述 |
| 收稿时间： | 2014-01-08 |
| 修稿时间： | 2014-03-09 |
Research Progress of Film/Bulk Oxide Magnetoelectric Composites |
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| WANG Jing;WU Xia;DENG Chao-Yong;ZHU Kong-Jun;NAN Ce-Wen.Research Progress of Film/Bulk Oxide Magnetoelectric Composites[J].Journal of Inorganic Materials,2014,29(9):905-911. |
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| Authors: | WANG Jing;WU Xia;DENG Chao-Yong;ZHU Kong-Jun;NAN Ce-Wen |
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| Affiliation: | (1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; 2. School of Electronics and Information Engineering, Guizhou University, Guiyang 550025, China; 3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China) |
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| Abstract: | Composite ceramics of ferrites (e.g., CoFe2O4, NiFe2O4) and ferroelectrics (e.g., BaTiO3, Pb(ZrxTi1-x)O3) are classical magnetoelectric (ME) materials, which are also the first composites found to exhibit large room-temperature ME effect. These composites are generally fabricated via sintering at high temperature of over 1200℃. However, such high-temperature co-firing processing yields atom inter-diffusion and/or chemical reactions between two phases, or even microcracks. In this review, several low-temperature (normally below 800℃) synthesis routes of depositing the ferromagnetic (ferroelectric) films on ferroelectric (ferromagnetic) bulk single-crystals or ceramics are summarized. By such means, the above-mentioned problems can be avoided to improve the ME effect across the interface. Methods frequently used for characterizing the ME effect in these ceramics-based composites films are also discussed. |
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| Keywords: | film/bulk composite magnetoelectric effect low-temperature growth |
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