Novel GaAs current-injection negative differential resistance transistor |
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| Authors: | K. F. Yarn Y. H. Wang C. Y. Chang C. S. Chang |
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| Affiliation: | (1) Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan;(2) Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;(3) Avantek, 3175 Bowers Avenue, 95054 Santa Clara, California, USA |
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| Abstract: | GaAs current-injection negative differential resistance transistors using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy are presented. For p+ with a sheet concentration of 1013 cm–2, a negative differential resistance region is revealed for a base currentIB<100 µA. The peak to valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. WhenIB>=100 µA, the proposed device operates as a conventional bipolar transistor. |
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