| Structure and internal stress of Au films deposited on SiO2／Si（100） andmica by dc sputtering |
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| 作者姓名： | HongQiu JingchunSun YueTian YanHuang LiqingPan FengpingWang PingWu |
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| 作者单位： | Hong Qiu，Jingchun Sun，Yue Tian，Yan Huang，Liqing Pan，Fengping Wang，and Ping Wu
Department of Physics，Applied Science School，University of Science and Technology Beijing，Beijing 100083，China |
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| 摘 要： | Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of 111] in the growth direction. However the films grown on mica have mixture crystalline orientations of 111], 200], 220] and 311] in the growth direction and the orientations of 200] and 311] are slightly more than those of 111] and 220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the 111]-and 311]-orientation grains are compressive while those in the 200]- and 220]-orientation grains are tensile. Au films grown SiOJSi(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.
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| 关 键 词： | 结构 内压 Au 金薄膜 膜材料 沉淀 SiO2／Si 云母矿 直流电阴极真空喷镀 |
Structure and internal stress of Au films deposited on SiO_2/Si(100) and mica by dc sputtering |
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| HongQiu JingchunSun YueTian YanHuang LiqingPan FengpingWang PingWu.Structure and internal stress of Au films deposited on SiO_2/Si(100) and mica by dc sputtering[J].Journal of University of Science and Technology Beijing,2004,11(5):415-419. |
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| Authors: | Hong Qiu Jingchun Sun Yue Tian Yan Huang Liqing Pan Fengping Wang and Ping Wu |
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| Affiliation: | Hong Qiu,Jingchun Sun,Yue Tian,Yan Huang,Liqing Pan,Fengping Wang,and Ping Wu
Department of Physics,Applied Science School,University of Science and Technology Beijing,Beijing 100083,China |
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| Abstract: | Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of 111] in the growth direction. However the films grown on mica have mixture crystalline orientations of 111], 200], 220] and 311] in the growth direction and the orientations of 200] and 311] are slightly more than those of 111] and 220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the 111]- and 311]-orientation grains are compressive while those in the 200]- and 220]-orientation grains are tensile. Au films grown SiO2/Si(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica. |
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| Keywords: | gold film mica SiO2/Si(100) structure internal stress |
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