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Structure and internal stress of Au films deposited on SiO2/Si(100) andmica by dc sputtering
引用本文:HongQiu JingchunSun YueTian YanHuang LiqingPan FengpingWang PingWu. Structure and internal stress of Au films deposited on SiO2/Si(100) andmica by dc sputtering[J]. 北京科技大学学报(英文版), 2004, 11(5): 415-419
作者姓名:HongQiu JingchunSun YueTian YanHuang LiqingPan FengpingWang PingWu
作者单位:Hong Qiu,Jingchun Sun,Yue Tian,Yan Huang,Liqing Pan,Fengping Wang,and Ping WuDepartment of Physics,Applied Science School,University of Science and Technology Beijing,Beijing 100083,China
摘    要:Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200] and [311] are slightly more than those of [111] and [220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]-and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiOJSi(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.

关 键 词:结构 内压 Au 金薄膜 膜材料 沉淀 SiO2/Si 云母矿 直流电阴极真空喷镀

Structure and internal stress of Au films deposited on SiO_2/Si(100) and mica by dc sputtering
Hong Qiu,Jingchun Sun,Yue Tian,Yan Huang,Liqing Pan,Fengping Wang,and Ping Wu. Structure and internal stress of Au films deposited on SiO_2/Si(100) and mica by dc sputtering[J]. Journal of University of Science and Technology Beijing, 2004, 11(5): 415-419
Authors:Hong Qiu  Jingchun Sun  Yue Tian  Yan Huang  Liqing Pan  Fengping Wang  and Ping Wu
Affiliation:Hong Qiu,Jingchun Sun,Yue Tian,Yan Huang,Liqing Pan,Fengping Wang,and Ping WuDepartment of Physics,Applied Science School,University of Science and Technology Beijing,Beijing 100083,China
Abstract:Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200] and [311] are slightly more than those of [111] and [220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]- and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiO2/Si(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.
Keywords:gold film  mica  SiO2/Si(100)  structure  internal stress  
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