| 钛酸锶钡改性掺杂的研究进展 |
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| 引用本文： | 刘桂君,胡文成,朱琳,谢振宇. 钛酸锶钡改性掺杂的研究进展[J]. 材料导报, 2006, 20(Z2): 333-335,338 |
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| 作者姓名： | 刘桂君 胡文成 朱琳 谢振宇 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 介绍了国内外近几年钛酸锶钡(Strontium Barium Titanate,BST)在掺杂改性方面的研究现状及各种掺杂对BST介电性能的影响,重点讨论了不等价掺杂及掺杂量对漏电流和介电损耗的影响,论述了材料组成、显微结构与介电性能之间的关系.最后提出了关于掺杂改性方面存在的问题.
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| 关 键 词： | 钛酸锶钡 掺杂 介电性能 漏电流 |
Research Progress in Doping Modification of Strontium Barium Titanate |
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| LIU Guijun,HU Wencheng,ZHU Lin,XIE Zhengyu. Research Progress in Doping Modification of Strontium Barium Titanate[J]. Materials Review, 2006, 20(Z2): 333-335,338 |
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| Authors: | LIU Guijun HU Wencheng ZHU Lin XIE Zhengyu |
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| Abstract: | The progress of doping modification of Ba_xSr_ 1x TiO_3 (Strontium Barium Titanate) materials is reviewed. The effects of various types of dopants such as an acceptor and a donor and concentration of dopants on the dielectric properties are investigated. The relations between composition,microstructure and dielectric properties are discussed.The major problems of doping modification are also presented. |
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| Keywords: | strontium barium titanate doping dielectric properties leakage current |
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