Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry |
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Authors: | Songfoo Koh Ahheng You Teckyong Tou |
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Affiliation: | 1. S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor, Malaysia;2. Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka, Malaysia;3. Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya, Malaysia |
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Abstract: | The effective copper diffusivity (Deff) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (CuI+) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O2+ ions. The CuI+ ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of CuI+ ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different Deff values, and compared with other measurement techniques. |
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