Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range |
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Authors: | M. Zhao X.Y. Liu Y.K. Zheng Yankui Li Sihua Ouyang |
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Affiliation: | Institute of Microelectronics of the Chinese Academy of Sciences, Microwave Devices and Integrated Circuits Department, 3 Beitucheng West Road, Beijing, China |
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Abstract: | In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (Rs) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, Rs, Gm and Schottky leakage current values are seen to be strongly temperature dependent. |
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