Monocrystalline silicon surface passivation by Al2O3/porous silicon combined treatment |
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| Authors: | M Ben Rabha M Salem MA El Khakani B Bessais M Gaidi |
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| Affiliation: | 1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia;2. Institut National de la Recherche Scientifique (INRS), 1650, Blvd. Lionel-Boulet, Varennes, Québec J3X 1S2, 6 Canada;3. Emirates college of technology, Millennium Tower, Sheikh Hamdan Street, P.O. Box: 41009, Abu Dhabi, United Arab Emirates |
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| Abstract: | In this paper, we report on the effect of Al2O3/porous silicon combined treatment on the surface passivation of monocrystalline silicon (c-Si). Al2O3 films with a thickness of 5, 20 and 80 nm are deposited by pulsed laser deposition (PLD). It was demonstrated that Al2O3 coating is a very interesting low temperature solution for surface passivation. The level of surface passivation is determined by techniques based on photoconductance and FTIR. As a result, the effective minority carrier lifetime increase from 2 μs to 7 μs at a minority carrier density (Δn) of 1 × 1015 cm?3 and the reflectivity reduce from 28% to about 7% after Al2O3/PS coating. |
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