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Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure |
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| Authors: | Dana Skácelová Vladimir Danilov Jan Schäfer Antje Quade Pavel S?ahel Mirko ?ernák Jürgen Meichsner |
| Affiliation: | 1. Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlá?ská 2, 611 37 Brno, Czech Republic;2. Leibniz Institute for Plasma Science and Technology (INP) Greifswald e.V., Felix-Hausdorff-Straße 2, 17489 Greifswald, Germany;3. Institute of Physics, University Greifswald, Felix-Hausdorff-Straße 6, 17487 Greifswald, Germany |
| Abstract: | In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation. |
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