Dielectric characteristics of Ga doped TbMnO3

Low-frequency (0.1–200 kHz) dielectric properties of Tb_1?xGa_xMnO₃ and TbGa_yMn_1?yO₃ (x, y = 0.05, 0.1, 0.2, 0.3, 0.4) ceramic composites, which were synthesized by conventional solid-state reaction, were investigated in the temperature range from 77 to 350 K. Both dielectric constants and loss tangent (tan δ) increase with increasing temperature and decrease with increasing frequency, respectively. Interestingly, the dielectric constants of Tb_1?xGa_xMnO₃ are as large as that of the parent TbMnO₃, while the loss tangent reduces remarkably and less than 1 at high frequencies. These improvements demonstrate that Ga doped TbMnO₃ may have potential applications.