| 硅基HgCdTe光伏器件的暗电流特性分析 |
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| 引用本文： | 岳婷婷,殷菲,胡晓宁.硅基HgCdTe光伏器件的暗电流特性分析[J].激光与红外,2007,37(13):931-934. |
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| 作者姓名： | 岳婷婷 殷菲 胡晓宁 |
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| 作者单位： | 中国科学院上海技术物理研究所，上海 200083；中国科学院研究生院，北京 100039 |
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| 摘 要： | 对硅基HgCdTe中波器件进行了变温电流电压特性的测试和分析。测量温度从30K到240K，得到R0对数与温度的1000／T的实验曲线及拟合结果。同时选取60K、80K及110K下动态阻抗R与电压V的曲线进行拟合分析。研究表明在我们器件工作的温度点80K，零偏压附近主要的电流机制是产生复合电流和陷阱辅助隧穿电流。要提高器件的水平，必须降低陷阱辅助隧穿电流和产生复合电流对暗电流的贡献。
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| 关 键 词： | 硅基 HgCdTe 变温 暗电流 |
Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes |
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| YUE Ting-ting,YIN Fei,HU Xiao-ning.Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes[J].Laser & Infrared,2007,37(13):931-934. |
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| Authors: | YUE Ting-ting YIN Fei HU Xiao-ning |
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| Affiliation: | Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083;Graduated Schnol of Chinese Academy of Science,Beijing 100039,China |
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| Abstract: | The current voltage characteristics via temperature of mid wavelength HgCdTe/Si photodiodes were measured and analyzed .The temperature range was from 30K to 240K, and the characteristic of R0 1000/T was measured and analyzed. The R V curve of 60K, 80K and 110K were modeled using different dark current mechanisms. The theoretical fitting of experimental data at 80K reveals the generation recombination and trap assisted tunneling current dominates for zero and low bias region. Reduction of generation recombination and trap assisted tunneling currents by selecting proper material and device technologies will improve our device performance. |
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| Keywords: | Si substrate HgCdTe variable temperature dark current |
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