| 栅压对LDMOS在瞬态大电流下工作的温度影响 |
| |
| 引用本文： | 李梅芝,陈星弼.栅压对LDMOS在瞬态大电流下工作的温度影响[J].半导体学报,2007,28(8):1256-1261. |
| |
| 作者姓名： | 李梅芝 陈星弼 |
| |
| 作者单位： | 电子科技大学微电子与固体电子学院，成都 610054;电子科技大学微电子与固体电子学院，成都 610054 |
| |
| 摘 要： | 研究 LDMOS在一次雪崩击穿后的大电流区,栅压对器件内部温度的影响.结果表明:温度随正栅压升高而升高,随负栅压升高而降低,并分析了有源区内电场强度、电流密度和功率密度随栅压的变化规律.从而证明,与LDMOS栅接地时相比,正栅压降低了器件的静电放电能力,而负栅压则提高了器件的静电放电能力.
|
| 关 键 词： | 栅压 温度 功率密度 栅压 LDMOS 瞬态 大电流 工作 温度影响 Currents Transient Temperature Gate 放电能力 静电 压降 时相 栅接地 变化规律 功率密度 电流密度 电场强度 有源区 |
| 文章编号： | 0253-4177（2007）08-1256-06 |
| 收稿时间： | 1/22/2007 4:36:28 PM |
| 修稿时间： | 2/27/2007 2:03:13 PM |
Influence of Gate Voltages on Temperature of LDMOS Under Ultra-High Transient Currents |
| |
| Li Meizhi and Chen Xingbi.Influence of Gate Voltages on Temperature of LDMOS Under Ultra-High Transient Currents[J].Chinese Journal of Semiconductors,2007,28(8):1256-1261. |
| |
| Authors: | Li Meizhi and Chen Xingbi |
| |
| Affiliation: | School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China |
| |
| Abstract: | The influence of gate voltages on the temperature of LDMOS under ultra-high transient currents is studied.The results show that in comparison with gate-grounded conditions,the temperature in the device rises when the gate voltages are positive,and the temperature falls when the gate voltages are negative.The distributions of the electric fields,conduction currents,and dissipated power densities under different gate voltages are also investigated.It is proved that positive gate voltages weaken the electro-static discharge capability of LDMOS,and negative gate voltages enhance it.These results can be used as a reference for the reliability of power devices. |
| |
| Keywords: | gate voltages temperature dissipated power densities |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
