Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits |
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Authors: | J. W. Kooi J. A. Stern G. Chattopadhyay H. G. LeDuc B. Bumble J. Zmuidzinas |
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Affiliation: | 1. California Institute of Technology, MS 320-47, Pasadena, California, 91125 2. Center for Space Microelectronics Technology/JPL, Pasadena, California, 91108
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Abstract: | Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices. |
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