| 氮化感应致n-MOSFETs Si/SiO2界面应力的研究 |
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| 引用本文： | 徐静平,黎沛涛,李斌.氮化感应致n-MOSFETs Si/SiO2界面应力的研究[J].电子学报,2000,28(2):49-51. |
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| 作者姓名： | 徐静平 黎沛涛 李斌 |
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| 作者单位： | 1. 华中理工大学固体电子学系,武汉,430074
2. 香港大学电机电子工程系,香港,薄扶林道 |
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| 基金项目： | 香港大学RGC和CRCG基金 |
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| 摘 要： | 本文借助氩离子（Ａｒ＾＋）背表面轰击技术研究不同氮化处理所导致的ｎ－ＭＯＳＦＥＴｓＳｉ／ＳｉＯ２界面附近剩余机械应力。结果表明：ＮＨ３氮化及Ｎ２Ｏ生长的氧化物－硅界央附近均存在较大的剩余应力，前者来自过多的界面氮结合，后者来自因为初始加速生长阶段。Ｎ２Ｏ氮化的氧化物表现出小得多的剩余应力，从而有优良的界面和体特性。
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| 关 键 词： | MOSFET 氮化 界面 应力 |
Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs |
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| XU Jing-Ping,LI Pei-tao,LI Bin.Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs[J].Acta Electronica Sinica,2000,28(2):49-51. |
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| Authors: | XU Jing-Ping LI Pei-tao LI Bin |
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| Abstract: | Residual mechanical stresses near the Si/SiO 2 interface in n MOSFETs induced by different nitridation processings are investigated by means of Ar + backsurface bombardment.The results show that the NH 3 nitridation and the N 2O growth result in larger residual stress,with the former from higher interfacial nitrogen incorporation and the later from its initial accelerated growth phase.However,the residual stress is negligible for N 2O nitrided oxide,indicating that fresh N 2O nitrided oxide itself has excellent interfacial and bulk properties. |
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| Keywords: | n-MOSFETs gate oxide nitridation Si/SiO_2 interface Ar~+ bombardment stress |
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