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A Graphene Field-Effect Device |
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| Authors: | Lemme M.C. Echtermeyer T.J. Baus M. Kurz H. |
| Affiliation: | Adv. Microelectron. Center Aachen; |
| Abstract: | In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs |
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