The specific contact resistance of Pd2Si contacts on n- and p-Si

The specific contact resistance ρ_c of Al and Pd₂Si contacts has been measured on p- and n-Si substrates of uniform resistivity. The variation of ρ_c with substrate resistivity is described by the following equations:

The specific contact resistance of Al contacts was found to be lower than the values of Pd₂Si contacts on p-Si. Pd₂Si contacts on both n- and p-Si, (111) orientation, become non-ohmic in the resistivity range $\text{0.020?0.10 Ω-}\text{cm}$.The data in this study are not sufficient to distinguish a variation in ρ_c with substrate orientation. Specific contact resistance values of Pd₂Si contacts on $\text{0.005 Ω-}\text{cm}\text{(100) n-}\text{Si}$ and $\text{0.010 Ω-}\text{cm}\text{(100) p-}\text{Si}$ were not significantly different from values expected for the (111) substrates.