Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. bias

Exact non-equilibrium one-energy-level numerical solutions of the admittance of a p+n junction are obtained from the nonuniform transmission line equivalent circuit model. Capacitance and conductance curves for equilibrium and reverse-biased gold-doped silicon diode are calculated using experimental values of emission and capture rates. Comparisons between theoretical and experimental frequency dependences of the admittance using new experimental capture rates show good agreements over a wide range of reverse bias.