An investigation of epitaxial films by means of high energy electron diffraction: II. A study of film morphology

In the present work film morphology was studied by an electron diffraction method. The electron microscopy replica method seems to be insufficient to give unambiguous information concerning film morphology and the growth process, but a combination of diffraction data and electron microscope observations gives much more complete information. We applied these methods to investigations of Ge epitaxial films on GaAs and Si substrates at different stages of growth (at thicknesses of 20 Å upwards).