Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impurities

The frequency dependence of $\text{ΔV/Δ(C}{}^{\mathrm{?2}}\text{)}$ of Schottky barriers with deep impurities has been discussed on the basis of the depletion approximation. Systematic treatment has been developed of Schottky barriers having spatially distributed deep centers and useful expressions have been derived for $\text{ΔV/Δ(C}{}^{\mathrm{?2}}\text{)}$. It is shown that the impurity profile, the energy level and the electron emission rate of deep impurities can be determined by making measurements of the frequency dependence of $\text{ΔV/Δ(C}{}^{\mathrm{?2}}\text{)}$. The method of measuring $\text{ΔV/Δ(C}{}^{\mathrm{?2}}\text{)}$ has also been briefly described.