The electrical properties of anodically grown silicon dioxide films

An electrochemical technique has been used to grow anodic silicon dioxide films of thicknessess between 80 Å and 1100 Å on n-type silicon. The properties of the anodic oxide and the associated Si/SiO₂ interfaces have been studied by forming metal-oxide-semiconductor (MOS) capacitors using the anodically grown oxide as the dielectric. MOS transistors have also been fabricated on n-type silicon using anodic gate oxides 100 Å to 1000 Å thick. Their properties and possible applications are discussed.