Properties of CdxPb1?xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.