Impact ionization current in MOS devices |
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Authors: | WW Lattin JL Rutledge |
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Affiliation: | Semiconductor Products Division, Motorola, Inc., 5005 East McDowell Road, Phoenix, Arizona 85008, U.S.A. |
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Abstract: | An impact ionization current flows in the substrate of an MOS device which is operated in the saturation region. This current results from hole-electron pairs created by impact ionization in the drain depletion region. This paper utilizes the transverse electric field across the depletion region and the probability of creating a hole-electron pair as a function of this field to calculate substrate current which is then compared with measured data. |
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