Electrical properties of CuInSe2 single crystals |
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| Authors: | J Parkes RD Tomlinson MJ Hampshire |
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| Affiliation: | Department of Electrical Engineering, University of Salford, Salford, England |
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| Abstract: | Various bulk electrical properties and device characteristics have been measured. It has been shown that the majority carrier type is dependent on crystal stoichiometry. Mobilities of 660 cm2/V sec and 30 cm2/V sec have been measured for n-and p-type samples, respectively. Rectifying contacts and p-n junctions have been investigated by small signal analysis and the associated doping levels and equilibrium band diagrams have been determined. Photovoltage measurements on rectifying contacts have shown that the band-gap has a value of 0.95 ± 0.01eV. |
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