| 铝-RIE刻蚀工艺 |
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| 引用本文： | 付玉霞,刘志弘,刘荣华,仲涛,李希有.铝-RIE刻蚀工艺[J].微纳电子技术,2000(5). |
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| 作者姓名： | 付玉霞 刘志弘 刘荣华 仲涛 李希有 |
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| 作者单位： | 清华大学微电子学研究所!北京100084 |
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| 摘 要： | 干法刻铝中 ,BCl3添加 Cl2 、CHCl3和 N2 ,可改变 Al的刻蚀速率、Al对 Si O2 和胶的选择性、线宽和胶膜质量 ,其中 Cl2 流量影响最大。此外 ,本文还给出 RF功率和气压的影响。采用适当的气体组合、不太高的功率和不太低的气压 (BCl3∶ Cl2 ∶ CHCl3∶ N2 =70 sccm∶ 1 5 sccm∶ 1 0 sccm∶ 0～ 5 0 sccm,2 0 0 m Torr,2 0 0 W)可以实现细线条 (0 .6μm) Al的刻蚀。
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| 关 键 词： | 刻蚀速率 选择性 线宽(CD)损失 |
Process of Al Reactive Ion Etching |
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| Fu Yuxia,Liu Zhihong,Liu Ronghua,Zhong Tao,Li Xiyou.Process of Al Reactive Ion Etching[J].Micronanoelectronic Technology,2000(5). |
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| Authors: | Fu Yuxia Liu Zhihong Liu Ronghua Zhong Tao Li Xiyou |
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| Abstract: | During RIE Al,addition of Cl 2,CHCl 3 and N 2 to BCl 3 can change etch rate of Al,selectivity to SiO 2 and resist,line width and resist quality,and the flow rate of Cl 2 is the most important factor for etch rate and critical dimension.Also effect of pressure and RF power is reported.Correct combination of those gases,high enough pressure and reasonable low RF power(BCl 3∶Cl 2∶CHCl 3∶N 2=70sccm∶15sccm∶10sccm∶0~50sccm,200mTorr,200W)can obtain small size feature(0 6μm)of aluminum. |
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| Keywords: | Etch rate Selectivity CD loss |
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