Comparison of F2 plasma chemistries for deep etching of SiC |
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| Authors: | P Leerungnawarat K P Lee S J Pearton F Ren S N G Chu |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL, USA;(2) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL, USA;(3) Bell Laboratories, Lucent Technologies, 07974 Murray Hill, NJ, USA;(4) Present address: Lucent Technologies, Reading, PA |
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| Abstract: | A number of F2-based plasma chemistries (NF3, SF6, PF5, and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 μm·min−1) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept
below approximately 75 eV. At a process pressure of 5 mtorr, the SiC etch rate falls-off by ∼15% in 30 μm diameter via holes
compared to larger diameter holes (>60 μm diameter) or open areas on the mask. We also measured the effect of exposed SiC
area on the etch rate of the material. |
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| Keywords: | F2-based plasma chemistries SiC high rate etching |
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