Passively Q-switched Yb3+:YCa4O(BO3)3 laser with InGaAs quantum wells as saturable absorbers |
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| Authors: | Liang H C Huang J Y Su K W Lai H C Chen Y F Huang K F Zhang H J Wang J Y Jiang M H |
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| Affiliation: | Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. |
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| Abstract: | A diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 microJ at a pulse repetition rate of 7 kHz. |
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