Sintering condition and PTCR characteristics of porous (Ba,Sr)(Ti,Sb)O3 |
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| Authors: | J-G Kim W-P Tai J-M Lee J-G Ha S-M Lim |
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| Affiliation: | (1) Institute of Advanced Materials, Inha University, Inchon, 402-751, South Korea;(2) Developing Division, Chuo Precision Industrial Co. Ltd, 112-5 Kawa, Ageo-Shi, Saitama-Ken 362-0048, Japan;(3) Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 139-701, South Korea;(4) Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung, 429-793, South Korea |
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| Abstract: | We fabricated porous (Ba,Sr)(Ti,Sb)O3 ceramics by adding potato-starch (1–20 wt %) and investigated the effects of sintering temperature (1300–1450 °C) and time (0.5–10 h) on the positive temperature coefficient of resistivity characteristics of the porous ceramics. The room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O3 ceramics decreased with increasing sintering temperature, while that of the ceramics increased with increasing sintering time. For example, the room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O3 ceramics for the samples sintered at 1300 °C and 1450 °C for 1 h is 6.8×103 and 5.7×102  cm, respectively, while that of the ceramics is 6.5×102 and 1.3×107 cm, respectively, for the samples sintered at 1350 °C for 0.5 h and 10 h. In order to investigate the reason for the decrease and increase of room-temperature electrical resistivity of the samples with increasing sintering temperature and time, the average grain size, porosity, donor concentration of grains (N
d), and electrical barrier height of grain boundaries ( ) of the samples are discussed. |
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