| 短沟道MOSFET阈值电压辐照增强漂移效应 |
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| 引用本文： | 王方,孙龙杰,黄敞,吾勤之,张玲珊.短沟道MOSFET阈值电压辐照增强漂移效应[J].微电子学,1988(6). |
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| 作者姓名： | 王方 孙龙杰 黄敞 吾勤之 张玲珊 |
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| 作者单位： | 骊山微电子公司
(王方，孙龙杰)，中科院新疆物理所
(黄敞，吾勤之)，中科院新疆物理所(张玲珊) |
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| 摘 要： | 本文对γ辐照环境下,小尺寸MOSFET的性能进行了研究,发现了短沟MOSFET阈值电压辐照增强漂移效应;提出了辐照损伤电荷非均匀分布概念;开发了二维数值模拟程序,对辐照损伤电荷引起的器件物理作用进行了分析;建立了辐照环境下短沟道MOSFET的简化模型,成功地解释了实验现象;在理论分析的基础上,提出了适用于VLSI的抗核加固措施,并经实验证实其有效性。
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| 关 键 词： | 短沟MOSFET 阈值漂移 辐照损伤电荷 二维数值模拟 |
Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET |
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| Wang Fang,Sun Longjie and Huang Chang.Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET[J].Microelectronics,1988(6). |
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| Authors: | Wang Fang Sun Longjie and Huang Chang |
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| Abstract: | The radiation enhanced threshold drift effect of submicron MOSFETs has been studied. A new concept of non-uniform distribution of radiation damaged charges is put forward in this paper,and a program for a 2-D numerical simulation has been developed to analyze the electric behavior of the short channel MOSFETs. The results of the theoretical analysis and two dimentional numerical simulation agree very well with the experiments. Finally, a number of relevant methods for the hardening of VLSI circuits are proposed. |
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| Keywords: | Short channel MOSFET Throshold drift Radiation damaged charge 2-D numerical simulation |
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