Effect of proton isolation on DC and RF performance of GaAs planardoped barrier diodes |
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Abstract: | Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290°C for 20 min, with the advantage of a planar process |
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