| TaOx薄膜在VOx薄膜离子注入/抽出性能研究中的应用 |
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| 引用本文： | 陈文锋,史月艳,张征. TaOx薄膜在VOx薄膜离子注入/抽出性能研究中的应用[J]. 真空科学与技术学报, 1999, 0(1) |
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| 作者姓名： | 陈文锋 史月艳 张征 |
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| 作者单位： | 清华大学电子工程系!北京100084 |
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| 摘 要： | 利用在可见光谱具有高透射比的TaOx离子导体薄膜作为保护层 ,研究了与水溶液发生化学反应的VOx薄膜的电化学性能及相应的可见光透射性能和色度变化。厚 10 0nm的TaOx薄膜即可达到对VOx薄膜的保护 ,避免水溶液对VOx薄膜的溶蚀 ,同时又不影响离子对VOx薄膜的注入 /抽出
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| 关 键 词： | 离子注入/抽出 离子存储 离子导体 色度 |
TaO_x Films Used in Study of Ion Storage Layers of VO_x |
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| Chen Wenfeng,Shi Yueyan,Zhang Zheng. TaO_x Films Used in Study of Ion Storage Layers of VO_x[J]. JOurnal of Vacuum Science and Technology, 1999, 0(1) |
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| Authors: | Chen Wenfeng Shi Yueyan Zhang Zheng |
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| Abstract: | VO x films used as ion storage materials is highly reactive with water.Effective protection can be obtained by growing thin TaO x layers with high luminous transmittance on top of the VO x films.The electro chemical properties,the possible variation in luminous transmittance and chroma of the TaO x protected VO x films,as well as the intercalation/extraction of Li were studied.Our results indicate that 100 nm thick TaO x layer may provide enough protection to the VO x films without any observable deterioration of the intercalation/extraction of Li . |
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| Keywords: | Ion intercalation/extraction Ion storage Ion conductor Chroma |
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