Characterization of localized states in thin PrBa2Cu3O7−x tunnel barriers |
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Authors: | J. Yoshida T. Nagano T. Hashimoto |
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Affiliation: | (1) Advanced Research Laboratory, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, 210 Kawasaki, Japan |
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Abstract: | Characteristic power-law dependence of junction conductance on temperature was confirmed at low temperatures fora,b-axis oriented Au/PrBa2Cu3O7−x /YBa2Cu3O7−y junctions with a PrBa2Cu3O7−x layer thinner than 30 nm, indicating that current transport via a small number of localized states was predominant. The radius and the density of the localized states were estimated to be 1.1 nm and 5.0x1019 eV−1 cm−3, respectively. Transport measurement at 1.7 K in a magnetic field of up to 6 T revealed no indication of on-site Coulomb repulsion of electrons in the localized states. These results support the possibility of resonant tunneling of Cooper pairs in superconductor-insulator-superconductor junctions with a thin PrBa2Cu3O7−x tunnel barrier. |
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