半导体阵列微剂量探测器前端读出电路设计

根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10~(-3)fC/pF。

Primary Designs on the Front-end Readout Circuits for a Semiconductor Array Microdosimeter

This paper introduces a kind of wide dynamic range readout circuits using GF chrt018IC CMOS technology based on the characteristic parameter of the th ree dimensional Si SOI PIN pixel microdosimeter.The circuit consists of a charge sensitive amplifier (CSA) with a PMOS input transistor,a pulse shaper,a voltage discriminator and a reference current source.It can realize amplification,filtering and voltage discrimination.The circuits have been simulated and the results show that the input dynamic range is 5 ～ 500 fC,with a channel dissipation of 2 mW and the total noise performance of 0.05 fC + 1.6 × 10-3 fC/pF.