High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes |
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| Authors: | Reddy VK Tsao AJ Neikirk DP |
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| Affiliation: | Microelectron. Res. Center, Texas Univ., Austin, TX, USA; |
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| Abstract: | A double barrier resonant tunnelling diode with the highest room temperature peak-to-valley current ratio using Al/sub x/Ga/sub 1-x/As/GaAs quantum wells is reported. Room temperature peak-to-valley ratios of 6.3 were obtained using an Al/sub 0.2/Ga/sub 0.8/As 'chair' barrier. Peak current density for these diodes was typically 30 kA/cm/sup 2/.<> |
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