Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/ |
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Authors: | Young CD Zeitzoff P Brown GA Bersuker G Byoung Hun Lee Hauser JR |
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Affiliation: | SEMATECH, Austin, TX, USA; |
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Abstract: | A novel intrinsic mobility extraction methodology for high-/spl kappa/ gate stacks that only requires a capacitance-voltage and pulsed I/sub d/-V/sub g/ measurement is demonstrated on SiO/sub 2/ and high-/spl kappa/ gate dielectric transistors and is benchmarked to other reported mobility extraction techniques. Fast transient charging effects in high-/spl kappa/ gate stacks are shown to cause the mobility extracted using conventional dc-based techniques to be lower than the intrinsic mobility. |
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