Very closely spaced quadspot native-oxide confined 780-nmsemiconductor lasers |
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Authors: | Sun D Teepe M Treat DW |
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Affiliation: | Xerox Palo Alto Res. Center, CA; |
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Abstract: | We describe the fabrication and characteristics of 7-μm spaced quadspot, independently addressable 785-nm native-oxide confined ridge waveguide laser diodes. The devices are fabricated from an Al0.1 Ga0.9As-Al0.4Ga0.6As-Al0.5 In0.5P quantum-well separate confinement heterostructure laser structure. Wet oxidation of the p-Al0.5In0.5P cladding layer is used to form a native oxide for not only ridge waveguide confinement, but also electrical insulation to allow electrical connection to laser stripes. These diodes show excellent performance: uniform threshold currents below 8 mA and differential quantum efficiencies over 35%/facet. The diodes show crosstalk less than 5% |
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