| 低k介质与铜互连集成工艺 |
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| 引用本文： | 孙鸣,刘玉岭,刘博,贾英茜.低k介质与铜互连集成工艺[J].微纳电子技术,2006,43(10):464-469. |
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| 作者姓名： | 孙鸣 刘玉岭 刘博 贾英茜 |
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| 作者单位： | 河北工业大学微电子所,天津,300130 |
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| 摘 要： | 阐明了低k介质与铜互连集成工艺取代传统铝工艺在集成电路制造中所发挥的关键作用。依照工艺流程,介绍了如何具体实现IC制造多层互连工艺:嵌入式工艺、低k介质与平坦化、铜电镀工艺与平坦化;阐述了工艺应用现况与存在的难题,给出了国际上较先进的解决方法。
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| 关 键 词： | 嵌入式工艺 低k介质 铜电镀 化学机械抛光 |
| 文章编号： | 1671-4776(2006)10-0464-06 |
| 收稿时间： | 2006-05-22 |
| 修稿时间： | 2006年5月22日 |
Advanced IC Process in Copper/Low-k Dielectrics Interconnections |
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| SUN Ming,LIU Yu-ling,LIU Bo,JIA Ying-qian.Advanced IC Process in Copper/Low-k Dielectrics Interconnections[J].Micronanoelectronic Technology,2006,43(10):464-469. |
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| Authors: | SUN Ming LIU Yu-ling LIU Bo JIA Ying-qian |
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| Abstract: | The critical role of Cu/low-k dielectrics interconnections instead of conventional Al process played in the IC fabrication was demonstrated.According to the process flow,how to realize the IC fabrication was described--embedded process,low-k dielectrics & CMP,Cu ECP & CMP.The status of process level and the issues were pointed out,the world advanced solutions were given. |
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| Keywords: | embedded process low-k dielectric Cu ECP CMP |
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