Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green’s Function Formalism |
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Authors: | Marc Bescond Jean-Luc Autran Nicolas Cavassilas Daniela Munteanu Michel Lannoo |
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Affiliation: | (1) Laboratory of Materials and Microelectronics of Provence (L2MP), UMR CNRS 6137, 49 rue Joliot-Curie, BP 146, 13384 Marseille, Cedex 13, France |
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Abstract: | A program to numerically simulate point defects in nanowire metal-oxide-semiconductor field-effect transistors is described. The simulation scheme is based on the non-equilibrium Green’s function method self-consistently being obtained via the resolution of 3D Poisson’s equation. A tight-binding hamiltonian is used and the point defect is characterized by a macroscopic coulombic tail treated in the mode-space approach, plus a short range on-site perturbation potential energy, treated exactly. The effect on internal quantities and on the transistor characteristics is studied as a function of the strength and the location of the defect potential. Subthreshold current is found to vary in a factor 10 according to the position of the impurity.Also With Institut Universitaire De France (IUF). |
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Keywords: | nanowire MOSFETs Ballistic transport point defect Green’ s function Coulomb potential |
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