| Abstract: | Low‐voltage operation and fast switching ability are necessary for wearable electronic devices. Recently, electrolyte dielectric materials have been widely used to decrease driving voltages; however, they often exhibit unwanted doping effects and power dissipation problems. Here, a method for dramatically lowering driving voltages is reported in organic electronics via source‐gated transistor (SGT) structures. SGTs are fabricated by evaporating asymmetric metals with different work functions for the source and drain electrodes. Versatile organic semiconductor‐based SGTs demonstrate a significantly lower drain voltage (<10 V) for the saturation regime compared to that of typical field‐effect transistors with the same dielectric layer (>80 V). Furthermore, coating reduced Pyronin B (rPyB) onto n‐type SGTs decreases the threshold voltage from 51.2 to 0.1 eV and improves air‐stability, exhibiting a maintained electron mobility (>90%) for 40 d. The air‐stability is due to both the energetic and kinetic factors, including a decreased lowest unoccupied molecular orbital level of the n‐type semiconductor after doping and covering the active layer with rPyB. Finally, flexible SGTs are fabricated on a Parylene‐C substrate that shows highly stable operation in a bending test. The results demonstrate a promising technology for low‐power, flexible electronic devices via electrode engineering. |
