Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires

Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growth morphology, microstructure, and defects in SiC nanowires were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The Raman scattering study indicated that the Raman peaks corresponding to the TO and LO phonon modes of the SiC nanowires had larger red shifts compared to those of bulk SiC material. The red shift, broadening peak, and the asymmetry of the Raman peak could be explained by the size confinement effect in the radial and growth directions. The growth mechanism of SiC nano-wires was discussed based on the vapor–liquid–solid reaction.