俄歇复合对应变量子阱激光器阈值电流的影响

通过考虑不同因素对压应变和张应变量子阱激光器阈值电流和特征温度的影响，得到了俄歇复合和非俄歇复合对阈值电流起主要作用的转变温度Tc，小于Tc时，主要是非俄歇复合；大于Tc时，主要是俄歇复合，而且张应变量子阱激光器转变温度要比压应变量子阱激光器的转变温度要高；张应变量子阱激光器与压应变量子阱激光器相比，阈值电流更低，特征温度更高。

Effect of Auger recombination on the threshold current of strained quantum well laser

The temperature dependence of threshold current density is calculated by taking the carrier losses (Auger recombination and non-Auger recombination) into account in strained quantum well lasers. The characteristic temperature and threshold current density are compared between tensile-strained quantum well laser and compressive-strained quantum well laser. There is a conversation temperature point (To) between Auger recombination and non-Auger recombination. When T is higher than Tc, Auger recombination is leading; T is lower than Tc, the non-Auger recombination is leading. There is a higher conversation temperature, a lower threshold current density and a higher characteristic temperature in tensile strained quantum well laser than in compressive-strained quantum well laser.