| Design and analysis of a UWB low-noise amplifier in the 0.18μm CMOS process |
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| 作者姓名： | 杨袆 高茁 杨丽琼 黄令仪 胡伟武 |
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| 作者单位： | Institute;Computing;Technology;Chinese;Academy;Sciences;Graduate;University; |
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| 基金项目： | supported by the National Natural Science Foundation of China (Nos. 60673146, 60703017, 60736012, 60801045);;the NationalHigh Technology Research and Development Program of China (No. 2007AA01Z114);;the State Key Development Program for BasicResearch of China (No. 2005CB321600) |
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| 摘 要： | An ultra-wideband （3.1-10.6 GHz） low-noise amplifier using the 0.18μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev fliers for input matching are analyzed and compared in detail. The measured power gain is 12.4-14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1-10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW （without output buffer for measurement） with a 1.8 V power supply and occupies 0.88 mm^2.
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| 关 键 词： | 金属氧化物 半导体 宽带滤波器 放大器 |
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