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半导体ZnO单晶生长的技术进展
引用本文:李新华,徐家跃.半导体ZnO单晶生长的技术进展[J].功能材料,2005,36(5):652-654,657.
作者姓名:李新华  徐家跃
作者单位:中国科学院上海硅酸盐研究所,上海,200050;中国科学院研究生院,北京,100039;中国科学院上海硅酸盐研究所,上海,200050
基金项目:国家自然科学基金资助项目(50372076)
摘    要:ZnO单晶是一种具有半导体、发光、压电、电光、闪烁等性能的多功能晶体材料。近年来,它在紫外光电器件和GaN衬底材料等方面的应用前景而使其成为新的研究热点。本文综述了ZnO单晶助熔剂法、水热法、气相法等生长技术的研究进展,结合ZnO单晶的化学结构,探讨了该晶体的结晶习性及生长技术发展方向。

关 键 词:氧化锌  结晶习性  晶体生长
文章编号:1001-9731(2005)05-0652-03

Technical progress on the growth of semiconductor ZnO crystals
LI Xin-hua,XU Jia-yue.Technical progress on the growth of semiconductor ZnO crystals[J].Journal of Functional Materials,2005,36(5):652-654,657.
Authors:LI Xin-hua  XU Jia-yue
Affiliation:LI Xin-hua~
Abstract:ZnO is a multi-function crystal with semiconduction,luminescence,piezoelectricity,photoelectricity,and scintillation properties.Now the prospect of its wide applications in uv optoelectronic devices and substrate for the epitaxial growth of GaN have drawn a great attraction.ZnO crystals have been grown by flux,hydrothermal and vapor growth method.The technical progress on the growth of ZnO crystals were reviewed in this paper.The crystallization behavior and the growth techniques of ZnO crystals were discussed from the view point of the crystal chemistry.
Keywords:ZnO  cystallization behavior  cystal growth
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