Strategies to Improve Field Emission Performance of Nanostructural ZnO |
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Authors: | C X Xu X W Sun |
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Affiliation: | (1) School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People’s Republic of China;(2) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Republic of Singapore |
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Abstract: | Nanostructural ZnO is a good candidate for field emission (FE) because of its high aspect ratio, controllable electrical conductivity,
and good thermal and chemical stability. In order to improve the FE performance, ZnO nanopins, gallium-doped nanofibers, periodic
nanorod arrays, and aligned nanotubes were designed and fabricated by a vapor-phase transport method using ZnO + C and ZnO + C + Ga2O3 powder mixtures, electrochemical deposition, and hydrothermal decomposition, respectively. The FE behaviors including threshold
of electric field, emission current density, field enhancement factor, and stability are reviewed in this paper based on our
previous works. Some strategies to improve the performance of the nanostructural ZnO field emitters are demonstrated. |
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Keywords: | Field emission (FE) ZnO nanostructure threshold field enhancement factor stability |
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