The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers |
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Authors: | XL Wang DG Zhao XY Li HM Gong H Yang JW Liang |
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Affiliation: | aState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;bShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China |
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Abstract: | To fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-Al-composition AlGaN (Al content > 50%) films with reduced dislocation densities must be developed. This paper describes the growth of high-Al-composition AlGaN film on (0001) sapphire via a LT AlN nucleation layer by low pressure metalorganic chemical vapor deposition (LPMOCVD). The influence of the low temperature AlN buffer layer thickness on the high-Al-content AlGaN epilayer is investigated by triple-axis X-ray diffraction (TAXRD), scanning electron microscopy (SEM), and optical transmittance. The results show that the buffer thickness is a key parameter that affects the quality of the AlGaN epilayer. An appropriate thickness results in the best structural properties and surface morphology. |
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Keywords: | AlGaN LT AlN TAXRD Dislocation |
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