|
|||||
|
|
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation |
|
| Authors: | F Duteil C -X Du K B Joelsson P O A Persson L Hultman G Pozina W -X Ni G V Hansson |
| Affiliation: | 1. Division of Surgery, Department of Surgery & Cancer, Imperial College London, St. Mary''s Hospital, London, UK;2. Perelman School of Medicine, University of Pennsylvania, Philadelphia, PA;3. Centre for Surgical Training & Research, University of Mediterrannee, Marseille, France;4. Department of Surgery, Faculty of Medicine, McGill University, Montreal, Canada;1. KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, Saudi Arabia;2. IMEC, Kapeldreef 75, Leuven, Belgium;3. Université de Sousse, Tunisia;4. Laboratoire de Micro-Optoélectroniques et Nanostructures, Université de Monastir, Tunisia;1. Department of Analytical and Environmental Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania;2. Department of Applied Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania;1. School of Materials Science and Engineering, Chang''an University, Xi''an, 710061, Shannxi, China;2. School of Materials Science and Engineering, Shaanxi Normal University, Xi''an, 710062, Shannxi, China;1. School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, 710119, PR China;2. School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710119, PR China |
| Abstract: | Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×1020 and 1×1021 cm−3, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si1−xGex and Si1−yCy layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54 μm associated with the intra-4f transition of Er3+ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p–i–n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×1020 cm−3 we find that Er/O ratios of 1 : 2 or 1 : 4 give higher intensity than 1 : 1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400–575°C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed. |
| Keywords: | Erbium Oxygen Doping Si-MBE Electroluminescence Photoluminescence |
| 本文献已被 ScienceDirect 等数据库收录！ | |