| 1．55μm InGaAsP／InPDH激光器中的0．95μm发光带与Auger复合 |
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| 引用本文： | 夏瑞东,常悦,庄蔚华.1．55μm InGaAsP／InPDH激光器中的0．95μm发光带与Auger复合[J].中国激光,1994,21(7):545-548. |
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| 作者姓名： | 夏瑞东 常悦 庄蔚华 |
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| 作者单位： | 首都师范大学物理系，中国科学院北京半导体所 |
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| 摘 要： | 报道了在１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ激光器中发现的０．９５μｍ波长高能发光峰的一系列实验结果，并通过分析肯定了ＩｎＧａＡｓＰ有源区的Ａｕｓｅｒ复合是造成载流子向两侧ＩｎＰ限制层漏泄的主要原因，也是影响１．５５μｍＩｎＧａＡｓＰ／ＩｎＰＤＨ激光器Ｔ０值的主要因素。
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| 关 键 词： | 1．55μmInGaAsP／InP激光器，Auger．复合，0．95μm发光，T0值，漏泄 |
| 收稿时间： | 1993/9/6 |
0.95 μm Luminous Strip And Auger Compound of 1.55 μm InGaAsP/InP DH Laser |
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| Xia Ruidong,Chang Yue.0.95 μm Luminous Strip And Auger Compound of 1.55 μm InGaAsP/InP DH Laser[J].Chinese Journal of Lasers,1994,21(7):545-548. |
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| Authors: | Xia Ruidong Chang Yue |
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| Abstract: | A series of experment results about 0.95 μm Wavelength high energy luminous peak in 1.55 μm InGaAsP/InP laser ware reported in this paper.And by physics analysis to these data,we can be sured that the Auger compound of InGaAsP active region is the major cause of carrier leakage toward the two sides of InP restricted layer.It is also the major factor to reduce the To of 1.55 μm InGaAsP/InP DH laser. |
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| Keywords: | 0 95 μm InGaAsP/InP DH laser Auger compound 0 95 μm luminous T0 leakage |
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