Switching behaviour of MISS diodes |
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| Authors: | I Zólomy A Adán |
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| Affiliation: | Chair of Electron Devices Technical University of Budapest, Hungary;Microelectronics Research Laboratory, Faculty of Electronics “J.A. Echeverria” Polytechnical Institute, Havana, Cuba |
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| Abstract: | A physical picture of the switching behaviour of MISS diodes is presented considering three phases of the turn-on process: a capacitive current rise time, an inversion charge delay time and a feedback regeneration time. Approximate calculations are derived based on the outlined physical picture and compared to the experimental results obtained in pulse experiments with polysilicon MISS diodes. A dynamic current-voltage characteristic is also presented which differs from the known static one. |
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