Scaling merged single-device-well MOSFETs for very large scale integration |
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| Authors: | M.H. Elsaid M.I. Elmasry |
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| Affiliation: | Department of Electrical Engineering, University of Waterloo, Ontario, Canada N2L 3G1 |
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| Abstract: | Single-Device-Well (SDW) MOSFETs are high density MOSFET structures based on merging two MOSFET devices; a surface channel device and a buried channel device sharing the same device well and the same gate. SDWs offer a potential device area saving of 50%. The merits of the merged SDW MOSFETs are further enhanced in a scaled down MOSFET VLSI technology. This is the subject of this paper. |
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